Switching Diodes MA6X128 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 6 1.9 ± 0.2 0.95 0.95 5 1 + 0.25 + 0.2 0.65 ± 0.15 0.3 − 0.05 + 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC)*1 Peak forward current*1 Symbol VR VRM IF IFM IFSM Tj .
1 MA6X128 IF V F 103 Switching Diodes IR V R 100 Ta = 150°C 1.6 1.4 VF Ta 102 10 Forward current IF (mA) Reverse current IR (µA) Forward voltage VF (V) 100°C 1 1.2 1.0 0.8 0.6 0.4 0.2 IF = 100 mA 10 1 Ta = 150°C 100°C 25°C − 20°C 0.1 25°C 0.01 10 mA 3 mA 10−1 10−2 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 Forward voltage VF (V) Reverse voltage VR (V) 0 −40 0 40 80 120 160 200 Ambient temperature Ta (°C) IR Ta 102 VR = 75 V 10 35 V 1.2 Ct VR 1 000 IF(surge) tW Forward surge current IF (surge) (A) f = 1 MHz Ta = 25°C Ta = 25°C IF(sur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA6X121 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA6X122 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA6X123 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA6X124 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA6X125 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA6X126 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA6X127 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA6X129 |
Panasonic |
Silicon epitaxial planar type Rectifier Diodes | |
9 | MA6X078 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA6X078 |
Panasonic |
Band Switching Diodes | |
11 | MA6X344 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA6X556 |
Panasonic |
Silicon epitaxial planar type |