Switching Diodes MA6X127 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 1.5 − 0.05 6 1.9 ± 0.2 0.95 0.95 5 1 + 0.25 + 0.2 0.65 ± 0.15 0.3 − 0.05 + 0.1 1.1 − 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junctio.
1 MA6X127 IF V F 103 1 Ta = 150°C Switching Diodes IR V R 1.6 1.4 100°C VF Ta 102 Forward current IF (mA) Reverse current IR (mA) Forward voltage VF (V) Ta = 150°C 10 100°C 25°C − 20°C 1 10−1 1.2 1.0 0.8 0.6 0.4 0.2 0 −40 10 mA 3 mA IF = 100 mA 10−2 25°C 10−3 10−1 10−4 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR Ta 6 VR = 75 V 35 V Ct VR 1 000 f = 1 MHz Ta = 25°C 300 IF(surge) tW Ta = 25°C IF(surge) tW 1 Terminal capacitance Ct (pF).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA6X121 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA6X122 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA6X123 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA6X124 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA6X125 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA6X126 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA6X128 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA6X129 |
Panasonic |
Silicon epitaxial planar type Rectifier Diodes | |
9 | MA6X078 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA6X078 |
Panasonic |
Band Switching Diodes | |
11 | MA6X344 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA6X556 |
Panasonic |
Silicon epitaxial planar type |