Band Switching Diodes MA6X078 (MA78) Silicon epitaxial planar type For band switching 4 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 Unit : mm 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 • Non connected three elements incorporated in one package • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allo.
5°
243
MA6X078
IF V F
103 Ta = 25°C
Band Switching Diodes
CD VR
10 f = 1 MHz Ta = 25°C
102
IR T a
VR = 33 V
5 3 2
Reverse current IR (nA)
102
Diode capacitance CD (pF)
Forward current IF (mA)
10
10
1
1
0.5 0.3 0.2
1
10−1
10−1
0.1
0 0.2 0.4 0.6 0.8 1.0
10
–2
0
4
8 12 16 20 24 28 32 36 40
0
20
40
60
80 100 120 140 160
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (°C)
rf IF
1.0 f = 100 MHz Ta = 25°C
rf f
1.0 IF = 2 mA Ta = 25°C
Forward dynamic resistance rf (Ω)
0.8
Forward dynamic resistance rf (Ω)
1 3 10 30 100
0.8
0.6
0.6
.
Band Switching Diodes MA6X078 (MA78) Silicon epitaxial planar type For band switching 4 2.90+0.20 –0.05 1.9±0.1 (0.95) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA6X121 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA6X122 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA6X123 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA6X124 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA6X125 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA6X126 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA6X127 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA6X128 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
9 | MA6X129 |
Panasonic |
Silicon epitaxial planar type Rectifier Diodes | |
10 | MA6X344 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA6X556 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA6X718 |
Panasonic |
Silicon epitaxial planar type |