Switching Diodes MA6X126 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 6 + 0.25 0.65 ± 0.15 1.45 ± 0.1 0.3 − 0.05 + 0.1 • Four-element contained in one package, allowing high-density mounting • High breakdown voltage (VR = 80 V) 1.9 ± 0.2 0.95 0.95 2.9 − 0.05 + 0.2 5 2 4 3 1.1 − 0.1 Par.
+ 0.1 + 0.1 1 1 MA6X126 IF V F 103 Between pins 1 and 5, 1 and 6 103 Between pins 2 and 4, 3 and 4 Switching Diodes IF V F 10 Ta = 150°C IR V R 102 102 Forward current IF (mA) Forward current IF (mA) 1 10 Ta = 150°C 100°C 25°C Reverse current IR (µA) 100°C 10 10−1 1 − 20°C 1 Ta = 150°C 100°C 25°C − 20°C 10−2 25°C 10−1 10−1 10−3 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 10−4 Between pins 1 and 5, 1 and 6 0 20 40 60 80 100 120 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR VR 100 Between pins 2 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA6X121 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA6X122 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA6X123 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA6X124 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA6X125 |
Panasonic |
Silicon epitaxial planar type | |
6 | MA6X127 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA6X128 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA6X129 |
Panasonic |
Silicon epitaxial planar type Rectifier Diodes | |
9 | MA6X078 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA6X078 |
Panasonic |
Band Switching Diodes | |
11 | MA6X344 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA6X556 |
Panasonic |
Silicon epitaxial planar type |