Switching Diodes MA6X124 Silicon epitaxial planar type Unit : mm For switching circuit 0.65 ± 0.15 2.8 + 0.2 − 0.3 + 0.25 1.5 − 0.05 6 1 0.65 ± 0.15 0.3 − 0.05 + 0.1 I Features • Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • Short reverse recovery time trr.
• Four-element contained in one package, allowing high-density mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
• Short reverse recovery time trr
• Small terminal capacitance, Ct
1.9 ± 0.2 0.95 0.95 2.9 − 0.05
+ 0.2
5
2
4
3
1.1 − 0.1
Parameter Reverse voltage (DC) Peak reverse voltage Average forward current
*1 Peak forward current
*1 Non-repetitive peak forward surge current
*1,2 Junction temperature Storage temperature Note)
*1 : Value for single diode
*2 : t = 1 s
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 225 500 150 −55 to +150
Unit V V mA mA m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA6X121 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA6X122 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA6X123 |
Panasonic |
Silicon epitaxial planar type | |
4 | MA6X125 |
Panasonic |
Silicon epitaxial planar type | |
5 | MA6X126 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
6 | MA6X127 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA6X128 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA6X129 |
Panasonic |
Silicon epitaxial planar type Rectifier Diodes | |
9 | MA6X078 |
Panasonic |
Silicon epitaxial planar type | |
10 | MA6X078 |
Panasonic |
Band Switching Diodes | |
11 | MA6X344 |
Panasonic |
Silicon epitaxial planar type | |
12 | MA6X556 |
Panasonic |
Silicon epitaxial planar type |