MA2C774 - Panasonic

MA2C774 Schottky Barrier Diodes

Schottky Barrier Diodes (SBD) MA2C774 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Sealed in small glass package (DO-34) • Allowing to insert to a 5 mm pitch hole • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its sh.

Features

• Sealed in small glass package (DO-34)
• Allowing to insert to a 5 mm pitch hole
• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Symbol.