Switching Diodes MA2C188 Silicon epitaxial planar type Unit : mm For high speed and high voltage switching, small-power rectification I Features • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole • High voltage (VR: 200 V) rectification is possible φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 13 min. 0.2 max. Paramete.
• Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole
• High voltage (VR: 200 V) rectification is possible
φ 0.45 max. COLORED BAND INDICATES CATHODE 1
0.2 max. 13 min.
0.2 max.
Parameter Reverse voltage (DC) Peak reverse voltage Average power dissipation Output current Repetitive peak forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Note)
* : t = l s
Symbol VR VRM PF(AV) IO IFRM IFSM Tj Tstg
Rating 200 250 400 200 625 1 175 −65 to +175
Unit V V mW mA mA A °C °C
2
φ 1.75 max.
1: Cathode 2: Anode JEDEC: DO-34
I .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2C185 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA2C165 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA2C166 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
4 | MA2C167 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
5 | MA2C178 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
6 | MA2C179 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA2C195 |
Panasonic |
Silicon epitaxial planar type | |
8 | MA2C196 |
Panasonic |
Silicon epitaxial planar type | |
9 | MA2C029 |
Panasonic |
Silicon epitaxial planar type variable resistor | |
10 | MA2C346 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2C700 |
Panasonic |
Schottky Barrier Diodes (SBD) | |
12 | MA2C700A |
Panasonic |
Schottky Barrier Diodes (SBD) |