MA2C719 - Panasonic

MA2C719 Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA2C719 Silicon epitaxial planar type Unit : mm For high-frequency rectification I Features • DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition • Allowing high-density mounting (5 mm pitch insertion) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • High rect.

Features

• DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition
• Allowing high-density mounting (5 mm pitch insertion)
• Optimum for high-frequency rectification because of its short reverse recovery time (trr)
• High rectification efficiency caused by its low forward-risevoltage (VF)
• High reliability achieved by the glass sealed package COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current
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