Switching Diodes MA2C185 Silicon epitaxial planar type Unit : mm For high-voltage switching circuits, small power rectification I Features • High reverse voltage (VR = 200 V) • Large output current IO • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. I Absolute Maximum Rat.
• High reverse voltage (VR = 200 V)
• Large output current IO
• Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole
COLORED BAND INDICATES CATHODE
φ 0.45 max. 1
0.2 max.
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Output current Repetitive peak reverse current Non-repetitive peak forward surge current surge current
* Average power dissipation Junction temperature Storage temperature Note)
* : t = l s Symbol VR VRRM IO IFRM IFSM PF(AV) Tj Tstg Rating 200 250 200 625 1 400 175 −65 to +175 Unit V V mA mA A mW °C °C
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2C188 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
2 | MA2C165 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
3 | MA2C166 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
4 | MA2C167 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
5 | MA2C178 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
6 | MA2C179 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA2C195 |
Panasonic |
Silicon epitaxial planar type | |
8 | MA2C196 |
Panasonic |
Silicon epitaxial planar type | |
9 | MA2C029 |
Panasonic |
Silicon epitaxial planar type variable resistor | |
10 | MA2C346 |
Panasonic |
Silicon epitaxial planar type | |
11 | MA2C700 |
Panasonic |
Schottky Barrier Diodes (SBD) | |
12 | MA2C700A |
Panasonic |
Schottky Barrier Diodes (SBD) |