Schottky Barrier Diodes (SBD) MA2C700, MA2C700A Silicon epitaxial planar type Unit : mm For ordinary wave detection For super high speed switching COLORED BAND INDICATES CATHODE φ 0.45 max. 1 0.2 max. 13 min. I Features • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic.
• Low forward rise voltage (VF) and satisfactory wave detection efficiency (η)
• Small temperature coefficient of forward characteristic
• Extremely low reverse current IR
• DO-34(DHD) envelope, allowing to insert to a 5 mm pitch hole
1st Band 2nd Band
0.2 max.
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak reverse voltage MA2C700 MA2C700A MA2C700 MA2C700A IFM IF Tj Tstg VRM Symbol VR Rating 15 30 15 30 150 30 125 −55 to +125 mA mA °C °C V Unit V
2 φ 1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
Peak forward current Forward current (DC) Junction temperature Stora.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MA2C700A |
Panasonic |
Schottky Barrier Diodes (SBD) | |
2 | MA2C719 |
Panasonic |
Silicon epitaxial planar type | |
3 | MA2C723 |
Panasonic |
Schottky Barrier Diodes | |
4 | MA2C774 |
Panasonic |
Schottky Barrier Diodes | |
5 | MA2C029 |
Panasonic |
Silicon epitaxial planar type variable resistor | |
6 | MA2C165 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
7 | MA2C166 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
8 | MA2C167 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
9 | MA2C178 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
10 | MA2C179 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
11 | MA2C185 |
Panasonic |
Silicon epitaxial planar type Switching Diodes | |
12 | MA2C188 |
Panasonic |
Silicon epitaxial planar type Switching Diodes |