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The M6MGB/T33BS8BWG is a Stacked Chip Scale Package The M6MGB/T33BS8BWG is suitable for a high performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 32M-bit Flash memory and 8M-bit mounting area, weight and small power dissipation. SRAM in a 66-pin Stacked CSP for lead free use. 32M-bit Flash memory is a 2,097,152 wor.
Access Time Flash SRAM 70ns (Max.) 85ns (Max.) F-VCC =VCC=2.7 ~ 3.0V Ta=-40 ~ 85 °C 66 pin S-CSP Ball pitch 0.80mm Outer-ball:Sn
– Ag-Cu
Supply Voltage Ambient Temperature Package
Application
Mobile communication products
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
A B C D E
NC NC NC A5 A4 A0
F-CE#
NC NC A18 A17 A7 A6 A3 A2 A1
S-CE1# S-LB# F-WP# S-GND F-WE#
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A16 A8
F-A20 S-UB#
NC
F-RP#
F-RY/BY#
A11 A15 A14 A13
S-OE#
F-A19
A10 A9
DQ12 DQ13 DQ15
11.0 mm
F G H J K L M
DQ11
DQ9 DQ8 DQ0 DQ1
DQ10
F-GND
S-CE2
DQ6 DQ4 DQ5
S-WE#
A12
F-GND
F-OE#
DQ2 DQ3.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M6MGT33BS8BWG-P |
Renesas |
CMOS SRAM |
|
| 2 | M6MGT33BS8AWG-P |
Renesas |
CMOS SRAM |
|
| 3 | M6MGT331S4BKT |
Renesas |
CMOS SRAM |
|
| 4 | M6MGT331S8AKT |
Renesas |
CMOS SRAM |
|
| 5 | M6MGT331S8BKT |
Renesas |
CMOS SRAM |
|
| 6 | M6MGT321S4TP |
Renesas |
CMOS SRAM |
|
| 7 | M6MGT321S8TP |
Renesas |
CMOS SRAM |
|
| 8 | M6MGT32BS4WG |
Renesas |
CMOS SRAM |
|
| 9 | M6MGT32BS8WG |
Renesas |
CMOS SRAM |
|
| 10 | M6MGT160S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 11 | M6MGT160S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 12 | M6MGT162S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|