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FEATURES • Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi Flash Memory 90ns ( Max.) Chip Package (S-MCP) that contents 16M-bits flash memory SRAM 85ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I). • Supply voltage Vcc=2.7 ~ 3.6V • Ambient temperature 16M-bits Flash memory is a 1048576 words, 3.3V-only, and W version Ta=-20 ~ 85°C .
• Access time The MITSUBISHI M6MGB/T162S2BVP is a Stacked Multi Flash Memory 90ns ( Max.) Chip Package (S-MCP) that contents 16M-bits flash memory SRAM 85ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I).
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature 16M-bits Flash memory is a 1048576 words, 3.3V-only, and W version Ta=-20 ~ 85°C high performance non-volatile memory fabricated by CMOS
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144bytes unsynchr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M6MGT162S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 2 | M6MGT160S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 3 | M6MGT160S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 4 | M6MGT166S2BWG |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
|
| 5 | M6MGT166S4BWG |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
|
| 6 | M6MGT321S4TP |
Renesas |
CMOS SRAM |
|
| 7 | M6MGT321S8TP |
Renesas |
CMOS SRAM |
|
| 8 | M6MGT32BS4WG |
Renesas |
CMOS SRAM |
|
| 9 | M6MGT32BS8WG |
Renesas |
CMOS SRAM |
|
| 10 | M6MGT331S4BKT |
Renesas |
CMOS SRAM |
|
| 11 | M6MGT331S8AKT |
Renesas |
CMOS SRAM |
|
| 12 | M6MGT331S8BKT |
Renesas |
CMOS SRAM |
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