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FEATURES The MITSUBISHI M6MGB/T160S2BVP is a Stacked Multi • Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) • Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words, • Ambient temperature 3.3V-only, and high perform.
The MITSUBISHI M6MGB/T160S2BVP is a Stacked Multi
• Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 2M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 2097152 bytes /1048576 words,
• Ambient temperature 3.3V-only, and high performance non-volatile memory W version Ta=-20 ~ 85°C fabricated by CMOS technology for the peripheral circuit
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch and DINOR(DIvided bit-line NOR) architecture for the memory cell. 2M-bits SRAM is a 262144 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M6MGT160S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 2 | M6MGT162S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 3 | M6MGT162S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
|
| 4 | M6MGT166S2BWG |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
|
| 5 | M6MGT166S4BWG |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP |
|
| 6 | M6MGT321S4TP |
Renesas |
CMOS SRAM |
|
| 7 | M6MGT321S8TP |
Renesas |
CMOS SRAM |
|
| 8 | M6MGT32BS4WG |
Renesas |
CMOS SRAM |
|
| 9 | M6MGT32BS8WG |
Renesas |
CMOS SRAM |
|
| 10 | M6MGT331S4BKT |
Renesas |
CMOS SRAM |
|
| 11 | M6MGT331S8AKT |
Renesas |
CMOS SRAM |
|
| 12 | M6MGT331S8BKT |
Renesas |
CMOS SRAM |
|