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M6MGB/T321S8TP provides for Software Lock Release function. Usually, all memory blocks are locked and can not be programed or erased, when F-WP# is low. Using Software Lock Release function, program or erase operation 32M-bit Flash memory is a 4,194,304 bytes / 2,097,152 words, can be excuted. 3.0V-only, and high performance non-volatile memory fabricated by.
DINOR (Divided bit-line NOR) architecture for the memory cell. Access Time Flash 85ns (Max.) 8M-bit SRAM is a 1,048,576 bytes / 524,288 words SRAM 85ns (Max.) asynchronous SRAM fabricated by silicon-gate CMOS technology. Supply Voltage VCC=2.7 ~ 3.0V The M6MGB/T321S8TP is a Stacked micro Multi Chip Package (S- µMCP) that contents 32M-bit Flash memory and 8M-bit Static RAM in a 52-pin TSOP. M6MGB/T321S8TP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight. Ambient Temperature Package Ta=-20 ~ 85 °C 52pin TSOP(Type-II), Lead pitch 0.4mm .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M6MGT321S4TP |
Renesas |
CMOS SRAM |
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| 2 | M6MGT32BS4WG |
Renesas |
CMOS SRAM |
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| 3 | M6MGT32BS8WG |
Renesas |
CMOS SRAM |
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| 4 | M6MGT331S4BKT |
Renesas |
CMOS SRAM |
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| 5 | M6MGT331S8AKT |
Renesas |
CMOS SRAM |
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| 6 | M6MGT331S8BKT |
Renesas |
CMOS SRAM |
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| 7 | M6MGT33BS8AWG-P |
Renesas |
CMOS SRAM |
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| 8 | M6MGT33BS8BWG |
Renesas |
CMOS SRAM |
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| 9 | M6MGT33BS8BWG-P |
Renesas |
CMOS SRAM |
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| 10 | M6MGT160S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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| 11 | M6MGT160S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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| 12 | M6MGT162S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
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