The MITSUBISHI M6MGB/T166S4BWG is a Stacked Chip Scale Package (S-CSP) that contents 16M-bits flash memory and 4M-bits Static RAM in a 72-pin S-CSP. 16M-bits Flash memory is a 1,048,576 words, 3.3V-only, and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the memor.
• Access time Flash Memory 90ns (Max.) SRAM 85ns (Max.)
• Supply voltage Vcc=2.7 ~ 3.6V
• Ambient temperature W version Ta=-20 ~ 85°C
• Package : 72-pin S-CSP , 0.8mm ball pitch
APPLICATION Mobile communication products
PIN CONFIGURATION (TOP VIEW) INDEX H
NC NC DU A5 A4 A0
F-A18 S-LB# F-WP# GND F-WE# FRY/BY#
G
F
E
D
C
B
A
NC 1 NC 2
A16 A8 A10 A9
DQ15
DU 3 A11 4 A15 5 A14 6 A13 7 A12 8
F-GND
F-A17
S-UB#
DU
F-A19
F-RP#
F-VCC S-VCC F-GND GND A0-A16
A7 A6 A3 A2 A1
SCE1#
S-OE#
DU DU
DQ12 SCE2 S-VCC
DU
S-A17
DU
DQ11
11.0 mm
F-CE#
DQ9 DU DQ8
DQ10
DQ13
:Vcc for Flash :Vcc f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M6MGT166S2BWG |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP | |
2 | M6MGT160S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP | |
3 | M6MGT160S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP | |
4 | M6MGT162S2BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP | |
5 | M6MGT162S4BVP |
Mitsubishi |
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP | |
6 | M6MGT321S4TP |
Renesas |
CMOS SRAM | |
7 | M6MGT321S8TP |
Renesas |
CMOS SRAM | |
8 | M6MGT32BS4WG |
Renesas |
CMOS SRAM | |
9 | M6MGT32BS8WG |
Renesas |
CMOS SRAM | |
10 | M6MGT331S4BKT |
Renesas |
CMOS SRAM | |
11 | M6MGT331S8AKT |
Renesas |
CMOS SRAM | |
12 | M6MGT331S8BKT |
Renesas |
CMOS SRAM |