LTE42012R - NXP

LTE42012R NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave p.

Features

• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Input matching cell improves input impedance and allows an easier design of wideband circuits. APPLICATIONS
• Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications. DESCRIPTION NPN silicon planar epitaxial m.