The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of sili.
Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm. Package Dimensions LTE-4238/LTE-4238C Description The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of sil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LTE4238 |
LITE-ON Electronics |
(LTE-x238x) LAMP | |
2 | LTE42005S |
NXP |
NPN microwave power transistor | |
3 | LTE42008R |
NXP |
NPN microwave power transistor | |
4 | LTE42012R |
NXP |
NPN microwave power transistor | |
5 | LTE4208 |
Lite-On Technology Corporation |
CLEAR TRANSPARENT COLOR PACKAGE | |
6 | LTE4208C |
Lite-On Technology Corporation |
GaAs T-1 3/4 Standard Infrared Emitting Diode | |
7 | LTE4.5MB |
Chequers Electronic |
Ceramic Filter and Trap | |
8 | LTE4.5MB |
ECS |
CERAMIC FILTER | |
9 | LTE400WQ-F02 |
SamSung |
LCD DIVISION | |
10 | LTE400WQ-F04 |
SamSung |
TFT LCD | |
11 | LTE430WQ-F05 |
Samsung |
LCD | |
12 | LTE430WQ-F07 |
Samsung |
LCD |