LTE42008R - NXP

LTE42008R NPN microwave power transistor

emitter connected to flange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter .

Features

• Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Input matching cell improves input impedance and allows an easier design of circuits. APPLICATION
• Common emitter class-A linear power amplifiers up to 4.2 GHz. PINNING - SOT440A PIN 1 2 3 collector base LTE42008R DESCRIPTION emitter connected to flange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to .