LTE42005S - NXP

LTE42005S NPN microwave power transistor

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 MAM131 e Marking code: 502 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave.

Features

• Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Input matching cell improves input impedance and allows an easier design of circuits APPLICATION
• Common emitter class-A linear power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange D.