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LTE42012R |
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| Part Number | LTE42012R |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 198 3 2 Top view olumns LTE42012R PINNING - S... |
| Features |
• Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell improves input impedance and allows an easier design of wideband circuits. APPLICATIONS • Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications. DESCRIPTION NPN silicon planar epitaxial m... |
| Document |
 LTE42012R Data Sheet
PDF 72.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | LTE42005S |
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| 2 | LTE42008R |
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| 3 | LTE4208 |
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