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The LH5316P00B is a 16M-bit mask-programmable ROM organized as 2,097,152 × 8 bits (Byte mode) or 1,048,576 × 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology. CMOS 16M (2M × 8/1M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE D0 D8 D1 D9 D2.
• 2,097,152 × 8 bit organization (Byte mode: BYTE = VIL) 1,048,576 × 16 bit organization (Word mode: BYTE = VIH)
• Access time: 120 ns (MAX.)
• Supply current:
– Operating: 70 mA (MAX.)
– Standby: 100 µA (MAX.)
• TTL compatible I/O
• Three-state output
• Single +5 V power supply
• Static operation
• Package: 44-pin, 600-mil SOP
• Item related with COCOM regulation:
– Non programmable
– Not designed or rated as radiation hardened
– CMOS process (P type silicon substrate) DESCRIPTION
The LH5316P00B is a 16M-bit mask-programmable ROM organized as 2,097,152 × 8 bits (Byte mode) or 1,048,576 × 16 b.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH531000B |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 2 | LH531000B-S |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|
| 3 | LH531024 |
Sharp Electrionic Components |
CMOS 1M (64K x 16) MROM |
|
| 4 | LH531V00 |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 5 | LH530800A |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 6 | LH530800A-Y |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|
| 7 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 8 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 9 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 10 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 11 | LH532100B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 12 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|