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The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes. It is fabricated using silicon-gate CMOS process technology. CMOS 2M (256K × 8/128K × 16) MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE/OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 1.
• 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode)
• BYTE input pin selects bit configuration
• Access times: 120/150 ns (MAX.)
• Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)
• Programmable OE/OE and OE1/OE1/DC
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 48-pin, 12 × 18 mm2 TSOP (Type I)
• ×16 word-wide pinout DESCRIPTION
The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word m.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 2 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 3 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 4 | LH532100B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 5 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|
| 6 | LH5324500 |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) MROM |
|
| 7 | LH5324C00 |
Sharp Electrionic Components |
CMOS 24M (1.5M x 16) MROM |
|
| 8 | LH5324P00A |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM |
|
| 9 | LH53259 |
Sharp Electrionic Components |
CMOS 256K (32K x 8) MROM |
|
| 10 | LH532600 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 11 | LH530800A |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 12 | LH530800A-Y |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|