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The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 28-PIN DIP 28-PIN SOP TOP VIEW A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 A16 A10 CE /OE/OE D7 D6 D5 D4 D3 .
• 131,072 words × 8 bit organization
• Access time: 150 ns (MAX.)
• Low power consumption: Operating: 192.5 mW (MAX.) Standby: 550 µW (MAX.)
• Programmable CE/OE/OE
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Packages: 28-pin, 600-mil DIP 28-pin, 450-mil SOP
• Mask ROM specific pinout
CMOS 1M (128K × 8) MROM
DESCRIPTION
The LH531000B is a mask-programmable ROM organized as 131,072 × 8 bits. It is fabricated using silicon-gate CMOS process technology.
PIN CONNECTIONS
28-PIN DIP 28-PIN SOP TOP VIEW
A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND
1 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH531000B-S |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|
| 2 | LH531024 |
Sharp Electrionic Components |
CMOS 1M (64K x 16) MROM |
|
| 3 | LH5316P00B |
Sharp Electrionic Components |
CMOS 16M (2M x 8/1M x 16) MROM |
|
| 4 | LH531V00 |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 5 | LH530800A |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 6 | LH530800A-Y |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|
| 7 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 8 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 9 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 10 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 11 | LH532100B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 12 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|