The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate process technology. D7 CE A10 OE/OE A11 A9 A8 A13 A14 21 22 23 24 25 26 27 28 29 32-PIN DIP 32-PIN SOP OE1/OE1/DC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 D0 D1 D2 GND CMOS 2M (256K × 8) MROM PIN CONNECTIONS TOP VIEW 1 2 3 4 5 6 7 8 9 10 11.
• 262,144 words × 8 bit organization
• Access time: 120 ns (MAX.)
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)
• Mask-programmable control pin: Pin 1 = OE1/OE1/DC Pin 24 = OE/OE
• Packages: 32-pin, 600-mil DIP 32-pin, 525-mil SOP 32-pin, 450-mil QFJ (PLCC) 32-pin, 8 × 20 mm2 TSOP (Type I) 32-pin, 400-mil TSOP (Type II) DESCRIPTION
The LH532100B-1 is a CMOS 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate process technology.
D7 CE A10 OE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM | |
2 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM | |
3 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM | |
4 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM | |
5 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM | |
6 | LH5324500 |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) MROM | |
7 | LH5324C00 |
Sharp Electrionic Components |
CMOS 24M (1.5M x 16) MROM | |
8 | LH5324P00A |
Sharp Electrionic Components |
CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM | |
9 | LH53259 |
Sharp Electrionic Components |
CMOS 256K (32K x 8) MROM | |
10 | LH532600 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM | |
11 | LH530800A |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM | |
12 | LH530800A-Y |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |