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The LH531024 is a mask-programmable ROM organized as 65,536 × 16 bits. It is fabricated using silicon-gate CMOS process technology. NC CE D15 D14 D13 D12 D11 D10 D9 D8 GND D7 D6 D5 D4 D3 D2 D1 D0 OE 40-PIN DIP 40-PIN SOP CMOS 1M (64K × 16) MROM PIN CONNECTIONS TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29.
• 65,536 words × 16 bit organization
• Access time: 100 ns (MAX.)
• Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.)
• Static operation
• TTL compatible I/O
• Three-state outputs
• Single +5 V power supply
• JEDEC standard EPROM pinout (DIP)
• Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 44-pin, 650-mil QFJ (PLCC) DESCRIPTION
The LH531024 is a mask-programmable ROM organized as 65,536 × 16 bits. It is fabricated using silicon-gate CMOS process technology.
NC CE D15 D14 D13 D12 D11 D10 D9 D8 GND D7 D6 D5 D4 D3 D2 D1 D0 OE 40-PIN DIP 40-PIN SOP
CMOS 1M (64K × 16) MROM
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LH531000B |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 2 | LH531000B-S |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|
| 3 | LH5316P00B |
Sharp Electrionic Components |
CMOS 16M (2M x 8/1M x 16) MROM |
|
| 4 | LH531V00 |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 5 | LH530800A |
Sharp Electrionic Components |
CMOS 1M (128K x 8) MROM |
|
| 6 | LH530800A-Y |
Sharp Electrionic Components |
CMOS 1M (128K x 8) 3 V-Drive MROM |
|
| 7 | LH532000B |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 8 | LH532000B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8/128K x 16) MROM |
|
| 9 | LH532048 |
Sharp Electrionic Components |
CMOS 2M (128K x 16) MROM |
|
| 10 | LH532100B |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 11 | LH532100B-1 |
Sharp Electrionic Components |
CMOS 2M (256K x 8) MROM |
|
| 12 | LH5324000 |
Sharp Electrionic Components |
CMOS 24M (3M x 8) MROM |
|