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Транзисторы биполярные n-p-n, составные Название КТ829А Ik max,A 8 Uкэo гр(Uкэо max)[Uкэr max],B100 Uкбо max,B 10.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KT829 |
ETC |
NPN Transistor | |
2 | KT829 |
ETC |
NPN Transistor #2 | |
3 | KT829 |
ETC |
NPN Transistor #3 | |
4 | KT829 |
ETC |
NPN Transistor #4 | |
5 | KT829B |
ETC |
KT829A/KT829B NPN Transistor | |
6 | KT8225A |
Integral |
NPN Transistor | |
7 | KT8232 |
ETC |
HIGH POWER compound NPN transistor | |
8 | KT8232A |
ETC |
HIGH POWER compound NPN transistor | |
9 | KT8232A1 |
INCHANGE |
NPN Transistor | |
10 | KT8232B |
ETC |
HIGH POWER compound NPN transistor | |
11 | KT8248A |
Integral |
NPN Transistor | |
12 | KT8248A1 |
Integral |
NPN Transistor |