KT8232A1 - INCHANGE

KT8232A1 NPN Transistor

·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS (T aB B =25 ℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 .

Features

isc Silicon NPN Darlington Power Transistor KT8232A1 ELECTRICAL CHARACTERISTICS TBCB=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage ICB= 30mA VCE(sat) Collector-Emitter Saturation Voltage ICB= 8A; IBB= 0.1A VBE(sat) Base-Emitter Saturation Voltage ICEO Collector Cutoff Current IEBO Emitter Cutoff Current ICB= 8A; I = BB B 0.1A V = CE B B 350V; I = BB B 0 V = CE B B 350V; I = BB B 0;TBCB=125℃ V = EB B B 5V; I =0 CB B hBFE DC Current Gain I = CB B 5A ; V = CE B B 5V MIN TYP. MAX UNIT 350 V .