KSP2907 - Fairchild Semiconductor

KSP2907 General Purpose Transistor

KSP2907 KSP2907 General Purpose Transistor • Collector-Emitter Voltage: VCEO= 40V • Collector Dissipation: PC(max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba.

Features

-150mA, IB= -15mA IC= -500mA, IB= -50mA VCB= -10V, IE=0 f=1MHz IC= -50mA, VCE= -20V f=100MHz VCC= -30V, IC= -150mA IB1= -15mA VCC= -6V, IC= -150mA IB1=IB2= -15mA 200 45 100 35 50 75 100 30 Min. -60 -40 -5 -20 Typ. Max. Units V V V nA 300 -0.4 -1.6 -1.3 -2.6 8 V V V V pF MHz ns ns VCE (sat) VCE (sat) Cob fT tON tOFF
* Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Output Capacitance
* Current Gain Bandwidth Product Turn On Time Turn Off Time
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as a PN2907 ©2000 Fairchild Semiconductor International Rev. A,.