KSP25/26/27 KSP25/26/27 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Power Dissipation: PC (max) =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : KSP25 .
, IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V
BVCBO
ICBO
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP25/26/27
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000k
10
VCE = 5V
IC = 1000 IB
hFE, DC CURRENT GAIN
100k
V BE(sat)
1
V CE(sat)
10k
1k
1
10
100
1000
0.1 10 100
400
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KSP22 |
OTAX |
Dip Switch | |
2 | KSP2222 |
Fairchild Semiconductor |
General Purpose Transistor | |
3 | KSP2222A |
Fairchild Semiconductor |
NPN Amplifier | |
4 | KSP24 |
Fairchild Semiconductor |
VHF Transistor | |
5 | KSP25 |
Fairchild Semiconductor |
Darlington Transistor | |
6 | KSP26 |
Fairchild Semiconductor |
Darlington Transistor | |
7 | KSP2907 |
Fairchild Semiconductor |
General Purpose Transistor | |
8 | KSP2907A |
Fairchild Semiconductor |
General Purpose Transistor | |
9 | KSP-1MLR2 |
KODENSHI KOREA CORP |
Silicon Photodiode Mounted | |
10 | KSP05 |
Fairchild Semiconductor |
Amplifier Transistor | |
11 | KSP05 |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR | |
12 | KSP06 |
Fairchild Semiconductor |
Amplifier Transistor |