KSP24 - Fairchild Semiconductor

KSP24 VHF Transistor

KSP24 KSP24 VHF Transistor 1 TO-92 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO IEBO IC PC TJ TSTG RTH(j-a) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25°C) Derate Above 25°C .

Features

MHz VCB=10V, IE=0, f=1MHz VCC=20V, IC=8mA Oscillator Injection=150mV VCC=20V, IC=8mA Oscillator Injection=150mV 19 24 30 400 620 0.25 24 29 0.36 MHz pF dB dB Min. 40 30 4.0 50 Typ. Max. Units V V V nA ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSP24 Typical Characteristics VCE = 10V VCE(sat),VBE(sat)[mA], SATURATION VOLTAGE 1000 10000 IC = 10IB hFE, DC CURRENT GAIN 100 1000 VBE(sat) VCE (sat) 100 10 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturati.