KSP06 - Fairchild Semiconductor

KSP06 Amplifier Transistor

KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement to KSP55/56 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP05 : KSP06 VCE.

Features

CE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1mA, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V BVEBO ICBO
* Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP05/06 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 1V IC = 10 IB hFE, DC CURRENT GAIN 1 V BE(sat) 100 0.1 VCE(sat) 10 1 10 100 1000 0.01 1 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRE.