KSP26 - Fairchild Semiconductor

KSP26 Darlington Transistor

KSP25/26/27 KSP25/26/27 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Power Dissipation: PC (max) =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : KSP25 .

Features

, IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V BVCBO ICBO
* Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP25/26/27 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000k 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) 10k 1k 1 10 100 1000 0.1 10 100 400 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT F.