KSP13 - Fairchild Semiconductor

KSP13 Darlington Transistor

KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Volt.

Features

V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1M 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) 10k 1k 1 10 100 1000 0.1 10 100 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAI.