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KSP06 |
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| Part Number | KSP06 |
| Manufacturer | Fairchild Semiconductor |
| Description | KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC (max)=625mW • Complement to KSP55/56 1 TO-92 1. Emitter 2. Base 3. Coll... |
| Features |
CE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA f=100MHz 100 50 50 0.25 1.2 V V MHz 0.1 0.1 0.1 µA µA µA Test Condition IC=1mA, IB=0 Min. 60 80 IE=100µA, IC=0 4 Max. Units V V V
BVEBO ICBO
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP05/06
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
10
VCE = 1V
IC = 10 IB
hFE, DC CURRENT GAIN
1
V BE(sat)
100
0.1
VCE(sat)
10 1 10 100 1000
0.01 1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRE... |
| Document |
 KSP06 Data Sheet
PDF 35.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KSP05 |
Fairchild Semiconductor |
Amplifier Transistor |
|
| 2 | KSP05 |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 3 | KSP06 |
Samsung semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 4 | KSP-1MLR2 |
KODENSHI KOREA CORP |
Silicon Photodiode Mounted |
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| 5 | KSP10 |
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