KSC5030 - Fairchild Semiconductor

KSC5030 NPN Epitaxial Silicon Transistor

KSC5030 KSC5030 High Voltage and High Reliabilty • High Speed Switching • Wide SOA 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector .

Features

width Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 3A, IB1 = -IB2 = 0.6A L = 1mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.4A VCE = 5V, IC = 2A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.4A VCC = 400V IC = 51B1 = -2.5IB2 = 4A RL = 100Ω 120 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classificntion Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2001 Fairchild Semiconductor Corporation Rev. A1, Jun.