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KSC5030 |
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| Part Number | KSC5030 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABS... |
| Features |
DITIONS
IC= 3A ; IB2= 0.6A; L= 2mH,Clamped
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO Collector Cutoff Current
VCB= 800V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 0.4A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB Output Capacitance fT Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1MHz IC= 0.4A ; VCE= 10V
Switching Tim... |
| Document |
 KSC5030 Data Sheet
PDF 206.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | KSC5030 |
Samsung semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | KSC5030 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | KSC5030F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 4 | KSC5039 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 5 | KSC5039F |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|