KSC5039F - Fairchild Semiconductor

KSC5039F NPN Epitaxial Silicon Transistor

KSC5039F KSC5039F High Voltage Power Switch Switching Application 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current.

Features

tion IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.3A IC = 2.5A, IB = 0.5A IC = 2.5A, IB = 0.5A VCE = 5V, IC = 0.1A VCB = 10V , f = 1MHz VCC=150V , IC = 2.5A, IB1 = -IB2 = 0.5A RL = 60Ω 10 40 1 3 0.8 10 1.5 2.0 V V MHz pF µs µs µs Min. 800 400 7 10 10 µA µA Typ. Max. Units V V
* Plus test: PW=300µs, Duty Cycle=2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5039F Typical Characteristics 2.0 1.8 IB = 180mA IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 hFE, DC CURRENT GAIN IB = 200mA IB = 160mA IB = 14.