KSC5019 - Fairchild Semiconductor

KSC5019 NPN Epitaxial Silicon Transistor

KSC5019 KSC5019 Low Saturation • VCE(sat)=0.5V at IC=2A, IB=50mA 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect.

Features

=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz 10 6 140 70 600 200 0.2 0.86 150 27 0.5 1.5 V V MHz pF Min. Typ. Max. 100 100 Units nA nA V V hFE Classification Classification hFE L 140 ~ 240 M 200 ~ 330 N 300 ~ 450 P 420 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC5019 Typical Characteristics 5 IB = 50mA IB = 40mA IB = 30mA IB = 20mA 10,000 EMITTER COMMON o Ta=25 C EMITTER COMMON VCE =1V IC[A], COLLECTOR CURRENT 4 3 hFE, DC CURRENT GAIN 1,000 100 2 IB = 10mA 1 IB = .