KSC5030F - Fairchild Semiconductor

KSC5030F NPN Epitaxial Silicon Transistor

KSC5030F KSC5030F High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collec.

Features

all Time Test Condition IC = 1mA, IE = 0, VBE=0 IC = 5mA, RBE =∞ IE = 1mA, IC = 0 IC = 3A, IB1 = -IB2 = 0.6A L = 1mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE= 5V, IC = 0.4A VCE = 5V, IC = 2A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.4A VCC = 400V IC = 5IB1 = -2.5IB2 = 4A RL = 100Ω 120 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classification Classification hFE1 ©2002 Fairchild Semiconductor Corporation R 10 ~ 20 O 15 ~ 30 Y 20 ~ 40 Rev. B1, December 2002 KSC5030F Typical Char.