This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC (max) @VGS =10V MAXIMUM RATING.
VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
200 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
TC=25 Derate above25
ID IDP EAS EAR dv/dt
PD
15 9.4 45
* 215
4.9
4.5 83.3 0.67
Maximum Junction Temperature
Tj
150
Storage Temperature Range Thermal Characteristics
Tstg -55 150
Thermal Res.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KF19N20D |
KEC |
N-Channel MOSFET | |
2 | KF19N20F |
KEC |
N-Channel MOSFET | |
3 | KF10N50F |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
4 | KF10N50FZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
5 | KF10N50P |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
6 | KF10N50PZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
7 | KF10N60F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
8 | KF10N60P |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
9 | KF10N65F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
10 | KF10N68F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
11 | KF11N50F |
KEC |
N-Channel MOSFET | |
12 | KF11N50P |
KEC |
N-Channel MOSFET |