This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMU.
VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL KF10N50P KF10N50F UNIT
KF10N50PZ KF10N50FZ
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID
IDP EAS EAR dv/dt
10 10
* 5 5
* 25 25
*
300
14.7
4.5
A
mJ mJ V/ns
Drain Power Dissipation
Tc=25 Derate above 25
PD
130 1.04
41.5 W 0.33 W/
Maximum Junction Temperature
Tj
150
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KF10N50F |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
2 | KF10N50FZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | KF10N50PZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
4 | KF10N60F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
5 | KF10N60P |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
6 | KF10N65F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
7 | KF10N68F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
8 | KF11N50F |
KEC |
N-Channel MOSFET | |
9 | KF11N50P |
KEC |
N-Channel MOSFET | |
10 | KF12 |
STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | |
11 | KF120 |
STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | |
12 | KF124 |
Tesla Elektronicke |
Transistor |