This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC MAXIMUM RA.
VDSS=650V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
650 30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Drain Power Dissipation
Tc=25 Derate above 25
ID IDP EAS EAR dv/dt
PD
10
* 6
* 25
* 360
16.5
4.5 46 0.37
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
150 -55 150
Thermal Resistance, Junct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KF10N60F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
2 | KF10N60P |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
3 | KF10N68F |
KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
4 | KF10N50F |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
5 | KF10N50FZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
6 | KF10N50P |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
7 | KF10N50PZ |
KEC |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
8 | KF11N50F |
KEC |
N-Channel MOSFET | |
9 | KF11N50P |
KEC |
N-Channel MOSFET | |
10 | KF12 |
STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | |
11 | KF120 |
STMicroelectronics |
VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT | |
12 | KF124 |
Tesla Elektronicke |
Transistor |