KF10N50F - KEC

KF10N50F N-CHANNEL MOS FIELD EFFECT TRANSISTOR

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMU.

Features

VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF10N50P KF10N50F UNIT KF10N50PZ KF10N50FZ Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 10 10
* 5 5
* 25 25
* 300 14.7 4.5 A mJ mJ V/ns Drain Power Dissipation Tc=25 Derate above 25 PD 130 1.04 41.5 W 0.33 W/ Maximum Junction Temperature Tj 150 .