KF11N50P - KEC

KF11N50P N-Channel MOSFET

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26nC MAXIMUM RATING.

Features

VDSS= 500V, ID= 11A Drain-Source ON Resistance : RDS(ON)=0.52 (Max) @VGS = 10V Qg(typ.) = 26nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF11N50P KF11N50F Drain-Source Voltage VDSS 500 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 11 11
* 7 7
* 33 33
* 400 6.6 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 178 1.43 46.3 0.37 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Th.