2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2847 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS .
eavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Character.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2842 |
Toshiba |
Silicon N-Channel MOSFET | |
2 | K2843 |
Toshiba Semiconductor |
2SK2843 | |
3 | K2845 |
Toshiba Semiconductor |
2SK2845 | |
4 | K2800 |
Hitachi Semiconductor |
2SK2800 | |
5 | K2803 |
Sanken |
2SK2803 | |
6 | K2806-01 |
Fuji Electric |
2SK2806-01 | |
7 | K2826 |
NEC |
2SK2826 | |
8 | K2828 |
Hitachi |
2SK2828 | |
9 | K2834-01 |
Fuji Electric |
2SK2834-01 | |
10 | K2835 |
Toshiba Semiconductor |
2SK2835 | |
11 | K2836 |
Toshiba |
2SK2836 | |
12 | K2837 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |