2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII) 2SK2845 Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain-source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 720 V) z Enhancement mode : Vth = 2.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Thermal resist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | K2842 |
Toshiba |
Silicon N-Channel MOSFET | |
2 | K2843 |
Toshiba Semiconductor |
2SK2843 | |
3 | K2847 |
Toshiba Semiconductor |
2SK2847 | |
4 | K2800 |
Hitachi Semiconductor |
2SK2800 | |
5 | K2803 |
Sanken |
2SK2803 | |
6 | K2806-01 |
Fuji Electric |
2SK2806-01 | |
7 | K2826 |
NEC |
2SK2826 | |
8 | K2828 |
Hitachi |
2SK2828 | |
9 | K2834-01 |
Fuji Electric |
2SK2834-01 | |
10 | K2835 |
Toshiba Semiconductor |
2SK2835 | |
11 | K2836 |
Toshiba |
2SK2836 | |
12 | K2837 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |