K2836 - Toshiba

K2836 2SK2836

2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2836 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 6.4 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.85 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDSS = 600 V) l Enhancement−mode : Vt.

Features

Max Unit Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 90 V, Tch = 25°C (initial), L = 100 mH, RG = 25 Ω, IAR = 1 A Note 4: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-04 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Gate leakage current Gate−source breakdown v.