K2835 - Toshiba Semiconductor

K2835 2SK2835

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 200 V) l Enhancement−mode : Vth.

Features

stance, channel to ambient Rth (ch−a) 96.1 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 Electrical Characteristics (Ta = 25°C) 2SK2835 Characteristics Symbol Test Condition Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistanc.