K2826 - NEC

K2826 2SK2826

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode ORDERING INFORMATION PART NUMBER 2SK2826 2SK282.

Features

• Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF (TYP.)
• Built-in Gate Protection Diode ORDERING INFORMATION PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS(AC) Gate to Source Voltage (VDS = 0 V) VGSS(DC) Drain Current (DC) Drain Current (Pulse) Note1 ID(DC) ID(pulse) Total Power Dissipation (TC = 25°C) PT Total Power Dissipation .