IXXX160N65B4 - IXYS

IXXX160N65B4 650V IGBT

Preliminary Technical Information XPTTM 650V IGBTs GenX4TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXXK160N65B4 IXXX160N65B4 VCES = IC110 = V ≤ CE(sat) tfi(typ) = 650V 160A 1.80V 90ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to .

Features

z Optimized for 10-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Packages z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 160A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 4.0 6.5 V 25 μA 1.5 mA ±200 nA 1.54 1.85 1.80 V V Applications z Power Inverters z UPS z Motor.